1/4 2011.09 - rev.a rectifier diode RRE02VS4S ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)low v f 2)small mold type. (tumd2s) ? structure ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 c) symbol limits unit v rm 400 v v r 400 v tj 150 c tstg - 55 to + 150 c ? electrical characteristics (tj=25 c) symbol min. typ. max. unit v f 0.95 1.1 v i r 0.01 1 a ? taping dimensions (unit : mm) parameter repetitive peak reverse voltage conditions junction temperature storage temperature forward current surge peak i fsm reverse voltage average rectified forward current io reverse current v r =400v forward voltage parameter i f =0.2a d 0.5 direct voltage glass epoxy substrate mounted r-road, 60hz half sin wave 60hz half sin wave, non-repetitive one cycle peak value, tj=25c 0.2 a 1 a conditions tumd2s 1.1 2.3 0.8 4.00.1 2.00.05 1.550.1 0 1.430.05 4.00.1 1.00.2 0 2.75 3.50.05 1.750.1 8.00.2 0.250.05 0.90.08 2.80.05 rohm : tumd2s dot (year week factory) + day 1.30.05 0.80.05 2.50.2 1.90.1 0.60.2 0.1 0.170.1 0.05 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RRE02VS4S 2/4 2011.09 - rev.a 0.001 0.01 0.1 1 0 0.5 1 1.5 forward voltage v f (v) v f -i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=75 c tj=150 c 0.1 1 10 100 1000 0 100 200 300 400 tj=150 c tj=25 c tj=125 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics 0.1 1 10 0 10 20 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics 950 955 960 965 970 975 980 985 990 995 1000 v f dispersion map forward voltage:v f (mv) ave:962mv tj=25 c i f =0.2a n=20pcs 0.1 1 10 reverse current:i r (na) i r dispersion map tj=25 c v r =400v n=20pcs ave:0.9na 0 1 2 3 4 5 6 7 8 9 10 ave:3.39pf tj=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RRE02VS4S 3/4 2011.09 - rev.a 0 1 2 3 4 5 6 7 8 9 10 ave:3.95a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0.1 1 10 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 0.1 1 10 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 c=100pf r=1.5k c=200pf r=0 ave:4.58kv ave:6.84kv electrostatic discharge test esd(kv) esd dispersion map 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - l) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) rth(j - a) on glass - epoxy substrate soldering land 6mm 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 d.c. d=0.5 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RRE02VS4S 4/4 2011.09 - rev.a 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 t tj=150 c d=t/t t v r io v r =200v 0a 0v on glass - epoxy substrate soldering land ambient temperature:ta( c) derating curve (io - ta) average rectified forward current:io(a) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 30 60 90 120 150 d.c. d=0.5 half sin wave d=0.8 average rectified forward current:io(a) case temperature:t l ( c) derating curve (io -t l ) t tj=150 c d=t/t t v r io v r =200v 0a 0v www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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